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Disclosed is a method that uses an anneal treatment on the wafer prior to electroplating to correct post-polish defects.). Benefits include improved yield and parametric performance and reliability.
English (United States)
This text was extracted from a Microsoft Word document.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately
63% of the total text.
Copper Electroplate Pre-Anneal Process
Optimization to Address Post Copper Polish Defects
Disclosed is a method that uses an anneal treatment on the
wafer prior to electroplating to correct post-polish defects.). Benefits
include improved yield and parametric performance and reliability.
Currently, most processes use a rinse only pre-treatment of
the barrier seed, which has inferior post CMP defect performance. It is known that pre-anneal of the barrier-seed
creates copper electroplate film stability (i.e. reduces grain growth and
The disclosed method uses an
anneal treatment on the wafer prior to electroplating to correct post-polish
defects. See Figure 1 for examples of
these defects. Pre-annealing is completed after barrier seed deposition and
prior to electroplating, at temperatures optimized for process [anneal
conditions from no-anneal to 350C have been evaluated]. One key issue is to balance CMP defect performance
versus gap fill degradation caused by over annealing the seed layer (see Figure
2). Figure 3 outlines the disclosed method’s process. Figure 4 shows post CMP
defects (as viewed on an SEM) as a function of pre-anneal condition.
Stress relaxation of electroplated copper films influences copper polish
performance defects. Annealing wafers prior to electroplating is a key
modulator for stress relaxation. Proper choice of pre-anneal conditions
can influence post copper polish defect performance. Thi...