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Disclosed is a method for a background signal in implanted silicon wafers for monitoring implanter tool performance. Benefits include improved yield and an improved manufacturing environment.
English (United States)
This text was extracted from a Microsoft Word document.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately
58% of the total text.
Method for a background signal in implanted silicon wafers
for monitoring implanter tool performance
Disclosed is a method for a background signal in implanted
silicon wafers for monitoring implanter tool performance. Benefits include improved yield and an improved
Secondary ion mass
spectrometry (SIMS) is the primary method that can accurately measure dosimetry
and implant depth. SIMS is destructive, slow, and cannot be used as in-line
The disclosed method
includes using picosecond ultrasonic laser sonar (PULSE) technology to
correlate damage caused by implantation to monitor implanter tool performance.
The disclosed method
provides advantages, including:
• Improved yield due to
the improved monitoring of implantation damage.
• Improved manufacturing environment due to
the improved tracking of wafer uniformity, hardware issues, and processing
• Non-destructive measurement technique
allows for measurement on product with better Metrology precision.
locally heats the surface of the substrate, generating a strain wave that
changes the local index of refraction. Because this technique is affected by
crystal quality, imperfections created by implantation have an impact in the
background signal. Therefore, the technique is sensitive to anything that
induces damage to the Si or affects Si crystallinity. Potentially affected