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Disclosed is a method for the deposition of a cobalt shunt layer using a spin-on coating technique. Benefits include improved performance, improved yield, and an improved manufacturing environment.
English (United States)
This text was extracted from a Microsoft Word document.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately
67% of the total text.
Method for the deposition of a cobalt shunt layer using a
spin-on coating technique
Disclosed is a method for the deposition of a cobalt shunt layer
using a spin-on coating technique. Benefits include
improved performance, improved yield, and an improved manufacturing
The conventional activation-free electroless cobalt deposition
process has a short bath life time. As a result, a high number of particles are
generated in electroless cobalt deposition and
high leakage current occurs.
This problem is conventionally solved by depositing a cobalt
shunt layer by immersing the wafers into an electroless cobalt solution bath.
Other possibilities include face-up spraying and microcell configurations.
The disclosed method is the deposition
of a cobalt shunt layer using a spin-on coating technique. The key elements of the method include (see
• Deposition of Co
and CoW alloy layers via a spin-on track
• Heating of the
wafers on the chuck inside the track tool and/or heating the constituent
components prior to mixing at the track liquid dispense nozzle
deposition below 50°C
• Nitrogen purge to
prevent the oxidation
• Recirculation of
the unused solution if the liquid dispense volume is increased due to the
liquid’s lower viscosity compared to a typical photoresist
The spin-on track can
process 60-90 wafers per hour as compared to the approximately 15 wafers per
hour with an immersion electroless process.