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Contacting Tunnel Junctions via Damascene Conducting Studs Fabricated using a Sacrificial Organic Dielectric Disclosure Number: IPCOM000020077D
Original Publication Date: 2003-Oct-23
Included in the Prior Art Database: 2003-Oct-23

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Magnetic Random Access memories sense their bit values by the measuring the resistance offered to a tunneling current. This requires contacting through a top electrode. We discuss a method of fabricating such an electrode in a fashion that could reduce damage to the magnetic stack and increase across-the-wafer homogeneity.