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MagRAM Fabricated on Sapphire Disclosure Number: IPCOM000020184D
Original Publication Date: 2003-Oct-30
Included in the Prior Art Database: 2003-Oct-30

Publishing Venue



This invention relates in general to magnetic tunnel junction (MTJ) memory embedded or attached applications to a processor. More particularly the invention relates to the MTJ memory cell built on silicon on sapphire or other dielectric substrate to be attached to the silicon VLSI device chip through packaging technique.