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Browse Prior Art Database

Reference Cell Scheme for MRAM

IP.com Disclosure Number: IPCOM000020216D
Original Publication Date: 2003-Nov-03
Included in the Prior Art Database: 2003-Nov-03

Publishing Venue

IBM

Abstract

This invention relates to a method of generating a reference signal current to be used when reading an MRAM cell. More specifically, this invention describes a method of generating a reference signal current when reading an "FET Cell" MRAM cell.