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An Improved Write Operation to Reduce and Correct Disturb Error in Magnetic Random Access Memory Disclosure Number: IPCOM000020220D
Original Publication Date: 2003-Nov-03
Included in the Prior Art Database: 2003-Nov-03

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Magnetic random access memory (MRAM) relies on the magnetic field generated by flowing current through wires to write information into memory cells. It is usually difficult to confine the field to the vicinity of any particular cell. The neighbor cells can be disturbed during the write operation if the write field is too large or the duration too long. This document describes a method to reduce this disturb sensitivity by tuning the write field or duration for each write operation, checking the most susceptible neighbors before and after the write operation to confirm their state, and writing the disturbed neighbors to their original state.