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A Method of Creating Local Transient Programming Current for MRAM by Charge Storage

IP.com Disclosure Number: IPCOM000020221D
Original Publication Date: 2003-Nov-03
Included in the Prior Art Database: 2003-Nov-03

Publishing Venue

IBM

Abstract

A method of creating local current pulse for writing MRAM cell and associated cell structures are described. The cell structure includes two write lines that traverse the array in generally the same direction. A write transistor and a local write wire is connected in series between these two metal lines for each cell. The write operation starts by charging the two metal lines to different electrical potential. The discharge of capacitors distributed along these lines when one of the write transistors is turned on creates a current pulse that writes the selected cell to the desired state.