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Disclosed is a method to detect substrate and film imperfections during shallow trench isolation processing. Benefits include improved functionality and improved reliability.
English (United States)
This text was extracted from a Microsoft Word document.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately
66% of the total text.
Method to detect substrate and film imperfections during
shallow trench isolation processing
is a method to detect substrate and film imperfections during shallow trench
isolation processing. Benefits include improved
functionality and improved reliability.
non-destructive method exists for finding defects in the substrate during
shallow trench isolation processing. End of the line (EOL) electrical test data
is used to find die failures. More than 10 weeks may be required to provide the
technique is to inspect a specific die using a cross-section with a Wright etch
process to highlight the defect. Although this technique provides information
quickly, it cannot be used as a non-destructive in-line process.
The disclosed method
uses strain, reciprocal space maps (RSMs), and diffuse scattering provided by
triple-axis x-ray diffraction (XRD) as a non-destructive, quick-turn monitor
for defect formation.
The disclosed method
provides advantages, including:
functionality due to providing a non-destructive in-line process for monitoring
• Improved reliability
due to improved defect monitoring
configuration increases the XRD resolution by decreasing the acceptance angle
to the detector, filtering extraneous scatter. The increased resolution enables
the user to determine a very accurate measurement of the material...