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Disclosed is a method for reduction of critical dimensions (CDs) during fabrication processing using an electron beam with image recognition software. Benefits include improved device functionality.
English (United States)
This text was extracted from a Microsoft Word document.
This is the abbreviated version, containing approximately
53% of the total text.
Method for the reduction of CDs during fabrication
processing using an electron beam with image recognition software
Disclosed is a method for
reduction of critical dimensions (CDs) during fabrication processing using an
electron beam with image recognition software. Benefits
include improved device functionality.
Critical dimensions have become smaller than can be printed
using conventional lithographic techniques. This problem is conventionally
addressed by using innovative masks and novel proprietary techniques for CD
reduction. Advanced masks use different
materials to alter light to the dimensions required for printing.
The disclosed method uses an electron beam and image
recognition software to reduce critical dimensions during wafer processing. The
electron beam may be part of an existing scanning electron microscope (SEM) used
to check critical dimensions or in a stand-alone system dedicated to this
technique. In this process, the beam strength and exposure time to the area of
interest are varied to fine tune the conditions for optimal reduction of the
dimensions. With the SEM’s imaging capability, wafer mapping can be used to
target a particular region or transistors. The electron beam scans across an
entire wafer or across a preidentified area using a mapping system with
coordinates (through image recognition).
The SEM system would run through an algorithm to identify the required
beam strength to get the necessary shrinkage in the resist. The beam reduces
the resist material in size, reducing the printed dimensions. If targeting was
done at a particular region of interest, then the system would again scan the
region of interest to insure the...