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Method for making electrical contact to a wafer with very thin Cu seeds or directly to a thin barrier material to enable electroplating

IP.com Disclosure Number: IPCOM000020732D
Publication Date: 2003-Dec-10

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for making electrical contact to a wafer with very thin Cu seeds or directly to a thin barrier material to enable electroplating. Benefits include improved functionality, improved performance, and improved reliability.