Browse Prior Art Database

Addition of Boron to Low-K Dielectrics to Increase Mechanical Integrity while Lowering K-Effective

IP.com Disclosure Number: IPCOM000020747D
Original Publication Date: 2003-Dec-11
Included in the Prior Art Database: 2003-Dec-11

Publishing Venue

IBM

Abstract

The inclusion of boron into the low-k dielectric, such as SiCOH, will form desired B-C, B-N and B-O bonds, which are stronger than the corresponding Si-based bonds.