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Side-Partial Growable Voltage Island Die for LSI Chip

IP.com Disclosure Number: IPCOM000021133D
Original Publication Date: 2003-Dec-26
Included in the Prior Art Database: 2003-Dec-26

Publishing Venue

IBM

Abstract

This voltage island structure for LSI die with peripheral I/Os can resolve three problems as shown below. With this growable structure, users can place as many I/O cells with different Vdd as they want depending on users application requirements. 1. Users can put core-logic of different Vdds in the voltage islands on the same die. 2. Users can turn on/off each growable voltage island independently for power management 3. Users can place I/O cells with different Vdd voltage at any die-sides of the growable voltage islands