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Disclosed is a method for sensitivity improvement via differential tunneling voltage for high-K dielectric thickness measurements. Benefits include improved functionality.
English (United States)
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Method for sensitivity improvement via differential
tunneling voltage for high-K dielectric thickness measurements
Disclosed is a method for sensitivity improvement via
differential tunneling voltage for high-K dielectric thickness measurements. Benefits include improved functionality.
Tunneling voltage is
a function of the physical thickness of high dielectric constant, K, dielectrics. One of the problems with the
conventional positive tunneling technique is that the SASS sensitivity is very
low. It is approximately 8 times lower than the conventional SiO2
tunneling voltage is the difference between the positive and negative tunneling
The disclosed method is sensitivity
improvement via differential tunneling for high-K dielectric thickness
measurements. The negative tunneling shows significant improvement (increase)
for the sensitivity. However, it is approximately 4 times smaller than the
sensitivity of positive tunneling for conventional SiO2-gate
dielectrics. The lower sensitivity means that the same voltage drift or noise
causes a larger thickness drift or variation for a high-K thickness
The disclosed method
uses the differential tunneling voltage, which gives an approximately 20%
increase in the combined sensitivity (see Figure 1). This differential
technique could potentially cancel out the unwanted impacts from both the
positive and negative tunneling as compared to only the positive or negative