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Memory Circuit with Multi-Bit-Line Direct Sensing Disclosure Number: IPCOM000021650D
Original Publication Date: 2004-Feb-25
Included in the Prior Art Database: 2004-Feb-25

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Memory configurations in flash memories, ROMs (Read-Only Memories) or MRAMs (Magnetoresistive Random Access Memories) normally employ a bit line multiplexer because the number of bit lines (data bits) selected by a word line is typically higher than the number of useful data outputs (Figure 1). This bit line multiplexer selects a subset of all bit lines and connects them to a sense amplifier, which amplifies the signal of the bit lines and forwards the amplified signal to the data lines. Up to now, pass transistors (Positive channel Field Effect Transistor (PFET) or Negative channel Field Effect Transistor (NFET)) or transmission gates (PFET and NFET) are used. Those devices with their respective control circuits consume area on the chip. Furthermore, the inherent resistance of those devices is reducing the speed of a memory read operation. Figure 2 shows the typical implementation of a bit line multiplexer. By activating one of the column select line (CSL) signals, one of the transfer gates becomes conductive. Consequently, the selected bit line (BL) is electrically connected to the data line (DL). In this configuration, bit line drivers are used to keep the bit line in a low standby state if it is not selected. Upon selection of a bit line, the driver pulls up the bit line to a "high" state. If the memory cell connected to that bit line and activated by the word line also stores a "high" signal, the bit line signal and the data line signal are both of a "high" value. However, if the memory cell stores a "low" value, the resulting voltage on the bit line will be of an intermediate or low value. Hence, a sense amplifier connected to the data line is able to observe the state of the memory cell by evaluating the voltage on the data line. The disadvantage of this prior art implementation is that the bit line is directly connected to the data line when selected. Hence, the bit line's capacitance is increased by the capacitance of the data line, thus slowing down the charging and discharging of the bit line.