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METHOD FOR FABRICATING A PHOTORECEPTOR

IP.com Disclosure Number: IPCOM000023723D
Original Publication Date: 1978-Dec-31
Included in the Prior Art Database: 2004-Mar-31

Publishing Venue

Xerox Disclosure Journal

Abstract

Disclosed is a photoreceptor fabrication method wherein a film of a solution including thermal sensitive organic selenium and tellurium compounds and a material capable of transporting at least one species of charge carrier is deposited on a sub-strate and subsequently heated until a desired amount of a selenium-tel1urium alloy is deposited within the film0 Typically, the heating is accomplished at a temperature between 100°Cand 200°C for 1 to 10 minutes0 It is important that the seleniuim-tellurium alloy include from 2 to 30 weight percent tellurium and from 98 to 70 weight percent selenium since an excessive amount of tellurium will lead to an un-desirably high, dark decay rate. Preferably the alloy includes from 20 to 25 weight percent tellurium and from 80 to 75 weight percent selenium.