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IP.com Disclosure Number: IPCOM000023957D
Original Publication Date: 1979-Jun-30
Included in the Prior Art Database: 2004-Apr-01

Publishing Venue

Xerox Disclosure Journal


In vacuum semiconductor growth systems, such as a molecular beam epitaxy, a rotating turret is adapted to hold a plurality of substrates upon which semiconductive layers may be deposited from thermal sources. These systems are held at ultra-high vacuum in order to minimize oxygen contamination. In order to transfer substrates into and out of the main vacuum chamber, it is desirable that