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Browse Prior Art Database

BURIED SINGLE HETEROSTRUCTURE LASERS

IP.com Disclosure Number: IPCOM000023990D
Original Publication Date: 1979-Jun-30
Included in the Prior Art Database: 2004-Apr-01

Publishing Venue

Xerox Disclosure Journal

Abstract

A CW room temperature operated, buried single heterostructure (SN) laser is possible with the structures shown in Figures 1 and 2. SH laser 10 in Figure 1 comprises a substrate 12 upon which there is formed a substrate mesa 14. Layers 18, 20 and 22 are thereafter sequentially grown by suitable growth techniques. Mesa 14 includes a diffused region 16 which forms the active layer of the structure. Layers 18, 20a, 20b and 22 all contain aluminum and provide a wider bandgap barrier on three sides of the active region 16. The narrow active region 16 provides optical wave confinement and electron-hole confinement in lateral directions due the aluminum layer confinement.