Browse Prior Art Database

GALLIUM IMPLANT IN NMOS FOR SPEED IMPROVEMENT

IP.com Disclosure Number: IPCOM000024487D
Original Publication Date: 1980-Oct-31
Included in the Prior Art Database: 2004-Apr-02

Publishing Venue

Xerox Disclosure Journal

Abstract

Experiments have shown that gallium (Gal implanted in a field oxide (FO) is operative to diffuse through Silicon Dioxide (SiO ). The implantation of Ga into SiO The purpose of impfanting Ga and diffusing it under Si02 is to prevent an inversion layer forming at the P-type Si - SiOz interface. Currently, the industry standard is to use boron (B) as a dopant for this purpose.