METHODS OF PROVIDING STRIPE GEOMETRY IN INJECTION LASERS
Original Publication Date: 1981-Apr-30
Included in the Prior Art Database: 2004-Apr-02
Xerox Disclosure Journal
Shown in Figures 1 and 2 are two ways for utilizing ion implantation of protons to fabricate current confining regions in semiconductor injection lasers. Ion implan-tation of protons causes damage to crystalline semiconductors rendering the implanted region electrically nonconductive. Generally, the surface layer or layers of the laser can be ion implanted followed by creation of a conductive channel through the proton implanted layer.