Browse Prior Art Database

METHODS OF PROVIDING STRIPE GEOMETRY IN INJECTION LASERS

IP.com Disclosure Number: IPCOM000024595D
Original Publication Date: 1981-Apr-30
Included in the Prior Art Database: 2004-Apr-02

Publishing Venue

Xerox Disclosure Journal

Abstract

Shown in Figures 1 and 2 are two ways for utilizing ion implantation of protons to fabricate current confining regions in semiconductor injection lasers. Ion implan-tation of protons causes damage to crystalline semiconductors rendering the implanted region electrically nonconductive. Generally, the surface layer or layers of the laser can be ion implanted followed by creation of a conductive channel through the proton implanted layer.