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INTEGRATED SELECTIVE MIRROR STRUCTURES ON DIODE LASERS

IP.com Disclosure Number: IPCOM000024923D
Original Publication Date: 1982-Oct-31
Included in the Prior Art Database: 2004-Apr-04

Publishing Venue

Xerox Disclosure Journal

Abstract

In U.S. Patent No. 4,280,107, a diode laser is disclosed having a multilayer structure deposited on a light emitting end facet. The structure includes ablative material, such as bismuth or tellurium, which is ablated at the Fabry-Perot by the internal power of the laser thereby forming an aperture at this point. Because of the muftilayer structure, the highest level of reflectivity will be at the center of the aperture. This will provide for lowest mode stabilization.