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DIRECT GROWTH OF SINGLE CRYSTAL SILICON ON AMORPHOUS SUBSTRATES

IP.com Disclosure Number: IPCOM000024926D
Original Publication Date: 1982-Dec-31
Included in the Prior Art Database: 2004-Apr-04

Publishing Venue

Xerox Disclosure Journal

Abstract

It has been proposed to provide thin films of silicon having desired crystallographic orientation (e.g., preferred orientation or epitaxial) on amorphous substrates by employing actual surface relief or grating followed by laser crystallization. See, for example, Applied Physics Letters 35(1) pp 71-74 (July 1, 1979) and U.S. Patent No. 4,333,792. First an amorphous or polycrystalline silicon film is deposited by CVD over a relief or grating structure on the surface of suitable substrate, such as fused silica or SiO Next, a uniformly oriented film of silicon is obtained by laser crystallization of &e amorphous silicon over the relief structure.