Browse Prior Art Database

TFT FABRICATION BY ANODIZATION OR PLASMA OXIDATION

IP.com Disclosure Number: IPCOM000025299D
Original Publication Date: 1984-Aug-31
Included in the Prior Art Database: 2004-Apr-04

Publishing Venue

Xerox Disclosure Journal

Abstract

A fabrication process is disclosed that achieves one vacuum pump down interfaces between the source drain metal contacts and the semiconductor and that provides an excellent interface between the semiconductor and the insulator. This is accomplished by utilizing the anodization or plasma oxidation of aluminum or tantalum. This process allows the making of thin film transistors (TFT) having much improved stability more economically than could be done with traditional TFT fabrication methods.