TFT FABRICATION BY ANODIZATION OR PLASMA OXIDATION
Original Publication Date: 1984-Aug-31
Included in the Prior Art Database: 2004-Apr-04
Xerox Disclosure Journal
A fabrication process is disclosed that achieves one vacuum pump down interfaces between the source drain metal contacts and the semiconductor and that provides an excellent interface between the semiconductor and the insulator. This is accomplished by utilizing the anodization or plasma oxidation of aluminum or tantalum. This process allows the making of thin film transistors (TFT) having much improved stability more economically than could be done with traditional TFT fabrication methods.