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EFFECTING DOPING AND COMPOSITIONAL VARIATIONS ON MISORIENTED SUBSTRATES

IP.com Disclosure Number: IPCOM000025455D
Original Publication Date: 1985-Aug-31
Included in the Prior Art Database: 2004-Apr-04

Publishing Venue

Xerox Disclosure Journal

Abstract

It is well known in both Si and GaAs technologies that doping concentration not only depends on many growth parameters, such as flow rates, melt composition, growth rates, growth temperatures, but also on substrate orientation. For example, Si is an amphoteric dopant in III-V materials. If Si diffuses into a Ga site, it will dope n-type and if Si diffuses into an As site, it will dope p-type. By liquid phase epitaxy, it is possible to form a p-n junction from a single Ga melt saturated with As and doped with Si. There will exist a conversion temperature for any particular set of growth conditions above which the material grows n-type and below which the material grows p-type. The conversion temperature can change drastically by just changing the orientation of the substrate from ,; 100) to either tlll)A to <111>B even though the melt conditions and cooling rates are maintained the same.