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EXAMPLES OF IMPROVED CLADDING LAYER PROFILES FOR HETERO-STRUCTURE DIODE LASERS

IP.com Disclosure Number: IPCOM000025530D
Original Publication Date: 1985-Dec-31
Included in the Prior Art Database: 2004-Apr-04

Publishing Venue

Xerox Disclosure Journal

Abstract

The sixteen figures show a series of possible variations in the cladding layers surrounding the active region of a semiconductor heterostructure diode laser. The variations are illustrated as aluminum compositional profiles versus layer thickness with the active region in the center and mirror imaged profiles on either side of the active region, one side doped p-type and the other side doped n-type. The active region may comprise a single double heterostructure active layer, a single quantum well or a multiple quantum well. The exemplified regime is GaAs/Gal- AIxAs where a change in x illustrates a change in A1 composition relative tolayer thickness. Active regions may be Gal-xA1xAs or GaAs or single or multiple quantum well. Curved or diagonal portions of profiles represent variation of A1 content during epitaxial growth.