Browse Prior Art Database

HIGH POWER SINGLE MODE SEMICONDUCTOR LASERS FABRICATED BY MO-CVD

IP.com Disclosure Number: IPCOM000025531D
Original Publication Date: 1985-Dec-31
Included in the Prior Art Database: 2004-Apr-04

Publishing Venue

Xerox Disclosure Journal

Abstract

Based upon tests of mesa waveguide semiconductor lasers of the type disclosed in US. Patent 4,433,417 and grown by MO-CVD, lateral spatial thickness variations (LSTV) in the active region of the laser can be induced by the growth conditions and surface kinetics at the growth interface. Such LSTVs can result in excellent waveguide structures due to the slight differences established in the lateral index of refraction causing laser operation to occur in the thickest portion of the laser active region. This not only provides good waveguiding but also results in an increase in charge diffusion into the lasing region, resulting in the lowering of lasing threshold.