SEMICONDUCTOR QUANTUM WELL WINDOW LASERS
Original Publication Date: 1985-Dec-31
Included in the Prior Art Database: 2004-Apr-04
Xerox Disclosure Journal
This disclosure relates to semiconductor heterostructure lasers having a "window" effect near or adjacent to the facets of the laser. In a patent application Serial No. 462,840 filed February 1, 1983, there is described various embodiments of combination index/gain guided semiconductor lasers. In some of the embodiments, index guiding regions are provided adjacent to the laser .facets. The index guiding attributes are provided through initial selective etching of the laser substrate, prior to growth, to permit the epitaxial growth of very thin layers in these end regions. The very thin deposited active layer at these regions form a thin quantum well region near the mirror facet so that a transparent "window" effect is achieved, allowing long laser life at high optical output powers.