Browse Prior Art Database

IMPROVED CURRENT/VOLTAGE CHARACTERISTICS FOR STRUCTURE LASERS

IP.com Disclosure Number: IPCOM000025575D
Original Publication Date: 1986-Apr-30
Included in the Prior Art Database: 2004-Apr-04

Publishing Venue

Xerox Disclosure Journal

Abstract

Multiple quantum well lasers grown in MO-CVD production, while having good operating characteristics, in some cases exhibit non-linear I-V characteristics and high variable series resistance. In these laser structures, the p-n junction is formed at the interface between the wide bandgap p-type claddmg layer and the first low bandgap well of the multiple quantum well.