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SPACER FOR IMPROVED LOCAL OXIDATION PROFILE

IP.com Disclosure Number: IPCOM000025758D
Original Publication Date: 1987-Oct-31
Included in the Prior Art Database: 2004-Apr-04

Publishing Venue

Xerox Disclosure Journal

Abstract

An oxide formation called a "bird's beak" ordinarily forms along the edge of a field oxide being grown in a semiconductor substrate such as silicon, because the profile of the field oxide is not as steep as desired. This beak limits the packing of devices on the substrate, so that the shorter the beak, the more devices can be packed into a given area. In addition, if the field oxide profile were steeper, isolation between devices would be better.