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CURVED RESONATOR SEMI-CONDUCTOR LASER STRUCTURES FABRICATED VIA IMPURITY INDUCED DISORDERING (IID)

IP.com Disclosure Number: IPCOM000025914D
Original Publication Date: 1988-Dec-31
Included in the Prior Art Database: 2004-Apr-04

Publishing Venue

Xerox Disclosure Journal

Abstract

It is desirable for many appIications to eliminate the constraint and necessity of having two cleared mirrors as feedback when fabricating a laser cavity in a semiconductor laser device. This is particularly true where such laser devices are integrated into an electro-optic circuit on a semiconductor chip. Thus, monolithic integration of complex circuits with laser emitters is just one example of problems encountered in integration of electro-optic components on a chip. Another example is where a fixed cavity length is necessary for a particular on-chip laser application.