ZnSe AND GaAs EPITAXY ON Si(100) SURFACES
Original Publication Date: 1991-Apr-30
Included in the Prior Art Database: 2004-Apr-05
Xerox Disclosure Journal
The problem of charge mismatch in the epitaxy of GaAs and ZnSe on Si (100) surfaces is completely eliminated by insertion of a suitable monolayer of atoms at the materials' interface. For most crystallographic orientations, and in particular for the (100) surface, perfect epitaxy leads to an interface charge density or dipole which causes atomic rearrangements and mixing at the interface preventing, in many cases, defect free growth.