Browse Prior Art Database

ZnSe AND GaAs EPITAXY ON Si(100) SURFACES

IP.com Disclosure Number: IPCOM000026327D
Original Publication Date: 1991-Apr-30
Included in the Prior Art Database: 2004-Apr-05

Publishing Venue

Xerox Disclosure Journal

Abstract

The problem of charge mismatch in the epitaxy of GaAs and ZnSe on Si (100) surfaces is completely eliminated by insertion of a suitable monolayer of atoms at the materials' interface. For most crystallographic orientations, and in particular for the (100) surface, perfect epitaxy leads to an interface charge density or dipole which causes atomic rearrangements and mixing at the interface preventing, in many cases, defect free growth.