IMPROVED HIGH VOLTAGE THIN FILM TRANSISTOR
Original Publication Date: 1993-Feb-28
Included in the Prior Art Database: 2004-Apr-06
Xerox Disclosure Journal
The present invention relates to high-voltage thin film transistors (referred to as "HVTFT"s). A goal of the present invention is to increase the carrier injection level in the ungated region of an a-Si lateral action HVTFT. This is accomplished by increasing the capacitance between the drain electrode and the gated region of the transport layer. By increasing the number of carriers that the carrier transport layer of the device is capable of supporting for a given drain bias (by increasing the capacitance between the drain electrode and the gated region of the transport layer), an improved HVTM' or similar device having reduced saturation voltage, and thus reduced loss, having increased gain, and having reduced switching speed is provided.