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Feature Depth Estimation Using Sheet Resistance Method

IP.com Disclosure Number: IPCOM000028110D
Original Publication Date: 2004-May-25
Included in the Prior Art Database: 2004-May-25

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Abstract

For measuring the depth of semiconductor structures, usually techniques like Atomic Force Microscopy (AFM) or Physical Failure Analysis (PFA) are used. Here, a new method is proposed that can easily be applied to test structures with a fixed number of features. By measuring the electrical resistance between two termination points of the test structure, the average depth of the features can be estimated. To enable electrical continuity between the two electrical termination points, a thin, conformal and continuos conductive film is deposited. This can be achieved using e.g. Atomic Layer Deposition (ALD). An example of such a test structure is shown in Figure 1. If "A" is the area of cross-section of the conductive liner material, "r" its resistivity and "R" the measured sheet resistance of the test structure, the mean feature depth can be estimated using the following equation: