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Combined E-Beam and Ion Beam for Circuit Edits

IP.com Disclosure Number: IPCOM000030140D
Publication Date: 2004-Jul-29
Document File: 4 page(s) / 88K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method that consists of an electron beam (E-beam) and back scatter electron detector, in addition to the standard ion beam which performs the milling. The electron image "sees" the circuit below the silicon surface by imaging to depths which are not "seen" by the focused ion beam (FIB) image.