Smart Power Integrated Circuit Design Architecture with Enhanced High-Side Breakdown Voltage
Original Publication Date: 2004-Oct-26
Included in the Prior Art Database: 2004-Oct-26
In this disclosure we propose a novel and unique process design architecture directly applicable to smart power integrated circuits, for achieving very high high-side breakdown voltage without enhancing process complexity. The technique is specially suited to smart power platforms where high-voltage devices are integrated with low and medium voltage devices using deep trench based isolation.