Measuring Local Temperature With Sub-Micrometer Resolution
Original Publication Date: 1989-Jan-01
Included in the Prior Art Database: 2005-Jan-26
A technique is described whereby the local temperature can be measured so as to give sub-micron lateral resolution. The concept obtains sub-micron lateral resolution through the use of interface kinetic rate of reaction between materials, such as silicon and a silicide forming metal. It is designed to be used in applications which require detection of heat which causes degradation in high density semiconductor integrated circuits. In high density semiconductor integrated circuits, local heating in the chip will often occur during its operation. This heating can be caused by a variety of sources, such as the high current density in the conductor lines, the high resistance at the contact and poor adhesion between conductor lines and substrates of the circuit card. The local heating can cause device degradation.