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Heterostructure Traveling Wave Transistor

IP.com Disclosure Number: IPCOM000034186D
Original Publication Date: 1989-Jan-01
Included in the Prior Art Database: 2005-Jan-27

Publishing Venue

IBM

Related People

Authors:
Fang, FF Smith, TP [+details]

Abstract

This article describes a high frequency device which can be used as an amplifier or an oscillator at frequencies up to 1 teraHertz. The device disclosed herein relies on an interdigitated periodic comb gate to modulate the carrier concentration of a two-dimensional electron gas which is closely coupled to a conducting layer. Fig. 1 is a cross-sectional side view of a representative structure and Fig. 2 is a top view. Layer A is a n+ gallium arsenide (GaAs) layer which can be used as a back gate. Layer B is a n- GaAs separated from the two-dimensional electron gas (2DEG) by approximately 50 nm of undoped GaAs. Layer C is the modulation-doped layer which produces the 2DEG. On the top of the structure is an interdigitated comb gate.