Heterostructure Traveling Wave Transistor
Original Publication Date: 1989-Jan-01
Included in the Prior Art Database: 2005-Jan-27
This article describes a high frequency device which can be used as an amplifier or an oscillator at frequencies up to 1 teraHertz. The device disclosed herein relies on an interdigitated periodic comb gate to modulate the carrier concentration of a two-dimensional electron gas which is closely coupled to a conducting layer. Fig. 1 is a cross-sectional side view of a representative structure and Fig. 2 is a top view. Layer A is a n+ gallium arsenide (GaAs) layer which can be used as a back gate. Layer B is a n- GaAs separated from the two-dimensional electron gas (2DEG) by approximately 50 nm of undoped GaAs. Layer C is the modulation-doped layer which produces the 2DEG. On the top of the structure is an interdigitated comb gate.