Non-Ohmic Behavior Monitor
Original Publication Date: 1989-Jan-01
Included in the Prior Art Database: 2005-Jan-27
A semiconductor in-line process monitor is shown which is designed to determine metal-to-silicide and silicide-to-diffusion interface resistance for process parametric control. A silicide and silicon voltage-sensing structure is added to a normal discrete device testing macro. The structure allows the potential difference over both the metal-to-silicide and the silicide-to-silicon interfaces to be measured at varying current levels. This information is used (a) to identify which interface is degrading the transistor characteristics, and (b) to quantify interface resistance as a function of different processes.