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Improved Bonding of VLSI Packaging Through the Use of Lithiated Polymides Disclosure Number: IPCOM000034415D
Original Publication Date: 1989-Feb-01
Included in the Prior Art Database: 2005-Jan-27

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De Hodgins, OC Pittler, M Stewart, KJ Vance, T [+details]


A technique is described whereby bonding of ceramic and metal polymides, as used in very large scale integrated (VLSI) circuit packaging, is improved through the use of lithiated polymides. Discussed is the fabrication method used to improve the characteristics of the polymide interlayer, so as to optimize the interface adhesion. In prior art, a compromise was typically implemented so as to avoid delamination at the ceramic/metal interface during fabrication of VLSI circuit packages. Using polymeric materials provided a two-fold objective. First, the material as a filler of ceramic pores and second, to function as an intermediate layer between the ceramic and the metal. The polymeric material was required to withstand high temperatures, as well as several temperature cycles.