Browse Prior Art Database

Method of Analyzing the Carbon Contamination of Thin Insulating Layers

IP.com Disclosure Number: IPCOM000034452D
Original Publication Date: 1989-Feb-01
Included in the Prior Art Database: 2005-Jan-27

Publishing Venue

IBM

Related People

Authors:
Faix, W Kaercher, R Landenberger, R Mueller, K Schramm, W [+details]

Abstract

As the integration density of semiconductor devices increases, it becomes extremely difficult to fabricate and monitor the quality of very thin insulating layers measuring less than 10 nm. The layer material generally used is silicon nitride which is suitable for a wide range of applications. Presently, there are no fast measuring methods for monitoring the quality of such thin layers during the production of semiconductor devices. The measuring method described below serves to determine the carbon concentration in thin silicon nitride layers.