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Error Check and Correction for Soft Error of Dynamic Random-Access Memory

IP.com Disclosure Number: IPCOM000034502D
Original Publication Date: 1989-Mar-01
Included in the Prior Art Database: 2005-Jan-27

Publishing Venue

IBM

Related People

Authors:
Ohsaki, K Ueda, M [+details]

Abstract

Voltage levels on each of the addressed bit line pairs are monitored to check whether data is correctly read from a DRAM (Dynamic Random- Access Memory). The error correction technique can be used in combination with the checking. DRAMs may often suffer from the problem of so-called soft error. A soft error is said to be caused by alpha particles; that is, alpha particles can induce electron-hole pairs in the PN junction of the memory cell and decay the charge stored in the cell. The present scheme is useful to detect such a soft error. Fig.1 shows the present error check circuit.