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Nonvolatile Ram Failure Rate Reduction Through the Use of Redundancy

IP.com Disclosure Number: IPCOM000034503D
Original Publication Date: 1989-Mar-01
Included in the Prior Art Database: 2005-Jan-27

Publishing Venue

IBM

Related People

Authors:
Norgaard, SP [+details]

Abstract

Often, computing systems have the need for nonvolatile storage that can be updated (both written and read) under microprocessor control. A nonvolatile random-access memory (NVRAM) device can be used to meet this need. An effective technique employing NVRAM uses redundancy to reduce the failure rate of the device. An NVRAM is made up of two devices. A static, random-access memory (SRAM) and an erasable, programmable, read only memory (EPROM). The failure rate of NVRAMs is relatively high compared to the rest of the large scale integration (LSI) logic on the card.