Chromium Reflector for Planar Metal Sputterers
Original Publication Date: 1989-Mar-01
Included in the Prior Art Database: 2005-Jan-27
In order to produce planar sputtered AlCu films capable of filling high aspect ratio holes, experiments have shown that a high wafer temperature (480 - 580oC) is necessary. In the absence of backside heating, maintaining and controlling the required high process temperature of the wafer is a critical control parameter. Planarized sputtered aluminum films allow filling of high aspect ratio vertical walled vias. These planar aluminum films require uniformly high temperatures (480 - 580oC) temperatures to reach the energy state at which planarization is possible. This is difficult to achieve in most sputtering systems because of heat control problems.