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Non-Alloyed Submicron Resonant Tunneling Device

IP.com Disclosure Number: IPCOM000034533D
Original Publication Date: 1989-Mar-01
Included in the Prior Art Database: 2005-Jan-27

Publishing Venue

IBM

Related People

Authors:
Heiblum, M Hong, JM Smith, TP [+details]

Abstract

A technique is described whereby high frequency oscillator resonant tunneling devices are fabricated without the use of alloyed ohmic contacts, to produce devices with low leakage currents and low parasitic capacitances. Also discussed is the fabrication with the insertion of undoped etch-stop and spacer layers. In order to fabricate submicron resonant tunneling diodes, transistors and photo-detectors with non-alloyed contacts, the implementation necessitates the addition of a very heavily doped layer on the surface of the structure and the insertion of an undoped layer between the doped electrode and the tunneling barriers. In addition, a pseudomorphic layer with a smaller band gap may be placed between the doped layer and the undoped layer to act as an etch-stop layer. The diagram in Fig.