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Browse Prior Art Database

High Rate Plasma Deposition System

IP.com Disclosure Number: IPCOM000034603D
Original Publication Date: 1989-Mar-01
Included in the Prior Art Database: 2005-Jan-27

Publishing Venue

IBM

Related People

Authors:
Hoh, PD Madakson, P Nguyen, TN Robinson, B Shivashankar, S [+details]

Abstract

A technique is described whereby a high rate/low temperature chemical deposition process uses a downstream microwave system, so as to produce high quality dielectric thin films for use in semiconductor device fabrication. Plasma-enhanced chemical vapor deposition (PECVD) is increasingly being used in semiconductor fabrication for depositing thin dielectric and metal material, because the deposition can be performed at low temperatures. The low temperature deposition allows the integration of many desirable materials, which previously required higher processing temperatures. However, the deposition rate required to produce high quality integrated circuits at low temperatures was quite low, or deposition was impossible.