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Characterizing Photolithographic Chromium Masks

IP.com Disclosure Number: IPCOM000034651D
Original Publication Date: 1989-Mar-01
Included in the Prior Art Database: 2005-Jan-27

Publishing Venue

IBM

Related People

Authors:
Dahmen, M Hafner, B Pietsch, D Zurheide, M [+details]

Abstract

Photolithographic masks for imaging finest structures during the production of semiconductor devices generally consist of a thin chromium layer which is deposited on a quartz substrate. The mask structures are photolithographically transferred to the chromium layer. Important characteristics of the finished photolithographic masks are that the dimensions and tolerances of the structures imaged on their surface are accurate, which depends in particular on the imaging system (artwork generator, stepper) used. The imaging system is characterized by optically measuring a large number of structures on a test mask produced by the imaging system for this purpose.