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Cathode Sputtering System With Sealing Flap Disclosure Number: IPCOM000034668D
Original Publication Date: 1989-Apr-01
Included in the Prior Art Database: 2005-Jan-27

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Theilmann, B [+details]


For depositing thin uniform, conductive or insulating layers on a substrate in a cathode sputtering system, the process chamber and the electrodes should be axially symmetrical to ensure a uniform plasma intensity. If a pivotable shutter is provided for temporarily covering the substrate, for example, during the cleaning of the target, the high- frequency axial symmetry is disturbed by the slot in the housing wall of the process chamber as long as the shutter is in its inoperative position outside the housing. This leads to non-uniformly sputtered layers. To avoid this, a sealing flap is provided inside the process chamber. In the inoperative position of the shutter, this flap rests against the inner housing wall of the process chamber, covering the slot.