Browse Prior Art Database

Method for Fabrication of Single Crystal Perovskite Films by Melting and Graphoepitaxy

IP.com Disclosure Number: IPCOM000034743D
Original Publication Date: 1989-Apr-01
Included in the Prior Art Database: 2005-Jan-27

Publishing Venue

IBM

Related People

Authors:
Chisholm, MF Smith, DA [+details]

Abstract

Surface topography of a substrate can have a profound effect on the orientation of a deposit. This is known for deposition from the vapor and has been suggested for solidification. The principle is that crystals which have a well-defined shape and are free to rotate can be aligned by natural or fabricated surface features on a substrate - a behavior termed graphoepitaxy. Graphoepitaxy can be used to grow superconducting perovskite materials from the melt, from vapor, or by crystallization from an amorphous deposit as characteristic tablets with the c-dimension being typically a fraction of the a and b dimensions. The designations a, b and c refer to the macroscopic edges of the tablets but also correspond to the charcteristic lengths of the crystal unit cell. Thus, aligning the tablets is equivalent to aligning the crystals.