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Method of Forming Submicron Resist Structures

IP.com Disclosure Number: IPCOM000034755D
Original Publication Date: 1989-Apr-01
Included in the Prior Art Database: 2005-Jan-27

Publishing Venue

IBM

Related People

Authors:
Hoerner, E [+details]

Abstract

Narrow submicron resist bars are produced by a photolithographic process applied to a positive resist layer followed by blanket exposure of the layer and a second development step. A layer 2 of a positive photoresist is applied to a substrate 1 (Fig. 1). Layer 2 is exposed to UV light through an appropriate mask and then developed using a suitable developer which simultaneously cross-links the photoresist surface. The resultant resist pattern 4 (Fig. 2) with vertical walls 3 is blanket exposed to UV light followed by a second development step, yielding a pattern of narrow submicron bars 5, each including a wall 3 (Fig. 3).