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Submicron Interdigital Electrode Fabrication

IP.com Disclosure Number: IPCOM000034807D
Original Publication Date: 1989-Apr-01
Included in the Prior Art Database: 2005-Jan-27

Publishing Venue

IBM

Related People

Authors:
Brady, MJ Speidell, JL [+details]

Abstract

A technique is described whereby optical lithography is used to fabricate submicron gratings and interdigital electrodes. Two methods are described: ion beam etching and wet chemical etching. Both utilize single level optical lithography evaporation. Certain device applications, such as optoelectronic switches, require interdigital electrode arrays. Typically, fabrication of equal fingers and spaces with small dimensions (submicron) require the use of (Image Omitted) electron beam, holography, or X-ray lithography. Optical lithography sets a limit on the order of one micron line width using normal exposure techniques. Utilizing III-V compounds [1] for optoelectronic switches for near infrared (IR) and far IR [2] requires small gaps and interdigital electrode structures.